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adjustable precision shunt regulators an431 data sheet 1 dec. 2012 rev. 2. 0 bcd semiconductor manufacturing limited general description the an431 series ics are three-terminal adjustable shunt regulators with guaran teed thermal stability over a full operation range. these ics feature sharp turn-on characteristics, low temper ature coefficient and low output impedance, which make them ideal substitutes for zener diodes in applications such as switching power supply, charger and other adjustable regulators. the output voltage of these ics can be set to any value between v ref (2.5v) and the maximum cathode volt- age (36v). the an431 precision reference is offered in two volt- age tolerance: 0.5% and 1.0%. these ics are availabl e in sot-23 package. features programmable precise output voltage from 2.5v to 36v high stability unde r capacitive load low temperature deviation: 4.5mv typical low equivalent full-range temperature coeffi- cient with 20ppm/ o c typical low dynamic output resistance: 0.15 typical sink current capacity from 1ma to 100ma low output noise wide operating range of -40 to 125 o c applications charger voltage adapter switching power supply graphic card precision voltage reference sot-23 figure 1. package type of an431
adjustable precision shunt regulators an431 data sheet 2 dec. 2012 rev. 2. 0 bcd semiconductor manufacturing limited figure 2. pin configurati on of an431 (top view) (sot-23) n package figure 3. functional block diagram of an431 functional block diagram ref v ref cathode anode + - pin configuration 2 1 3 anode ref cathode 3 2 1
adjustable precision shunt regulators an431 data sheet 3 dec. 2012 rev. 2. 0 bcd semiconductor manufacturing limited ordering information circuit type condition b: 1.0% a: 0.5% e1: lead-free an431 - a: an431 (40v) package temperature range condition part number marking id packing type lead free green lead free green sot-23 -40 to 125 o c 0.5% AN431AN-ATRE1 an431an-atrg1 eb1 gb1 tape & reel 1.0% an431bn-atre1 an431bn-atrg1 eb2 gb2 tape & reel package n: sot-23 tr: tape and reel bcd semiconductor's pb-free produc ts, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages. g1: green
adjustable precision shunt regulators an431 data sheet 4 dec. 2012 rev. 2. 0 bcd semiconductor manufacturing limited parameter symbol value unit cathode voltage v ka 40 v cathode current range (continuous) i ka -100 to 150 ma reference input current range i ref 10 ma power dissipation p d 370 mw junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c esd (human body model) esd 2000 v note 1: stresses greater than those listed under "absolut e maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operat ion of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolute maximum ratings" for extended periods ma y affect device reliability. absolute maximum ratings (note 1) parameter symbol min max unit cathode voltage v ka v ref 36 v cathode current i ka 1.0 100 ma operating ambient temperature range -40 125 o c recommended operating conditions
data sheet 5 dec. 2012 rev. 2. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431 parameter test circuit symbol conditions min typ max unit reference voltage 0.5% 4 v ref v ka =v ref, i ka =10ma 2.487 2.500 2.512 v 1.0% 2.475 2.500 2.525 deviation of reference voltage over full temperature range 4 v ref v ka =v ref i ka =10ma 0 to 70 o c 4.5 8 mv -40 to 85 o c 4.5 10 -40 to 125 o c 4.5 16 ratio of change in reference voltage to the change in cathode voltage 5 v ref v ka i ka =10ma v ka = 10v to v ref -1.0 -2.7 mv/v v ka = 36v to 10v -0.5 -2.0 reference current 5 i ref i ka =10ma, r1=10k , r2= 0.7 4 a deviation of re ference current over full temperature range 5 i ref i ka =10ma, r1=10k r2= , t a =-40 to 125 o c 0.4 1.2 a minimum cathode current for regulation 4 i ka (min) v ka =v ref 0.4 1.0 ma off-state cathode current 6 i ka (off) v ka =36v, v ref =0 0.05 1.0 a dynamic impedance 4 z ka v ka =v ref , i ka =1 to 100ma, f 1.0khz 0.15 0.5 thermal resistance jc sot-23 135 o c/w electrical characteristics operating conditions: t a =25 o c, unless otherwise specified.
adjustable precision shunt regulators an431 data sheet 6 dec. 2012 rev. 2. 0 bcd semiconductor manufacturing limited figure 4. test circuit 4 for v ka =v ref figure 5. test circuit 5 for v ka >v ref figure 6. test circuit 6 for i off i off v in v ka electrical characteristics (continued) v in v ka r1 i ka v ref v in v ka i ka r1 r2 v ref v ka =v ref *(1+r1/r2)+ i ref *r1 i ref r3
data sheet 7 dec. 2012 rev. 2. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431 -60 -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 r 1 =10k,r 2 = i ka =10ma reference current ( a) ambient temperature ( 0 c) figure 7. reference voltage vs. ambient temperature figure 8. reference current vs. ambient temperature figure 9. cathode current vs. cathode voltage figure 10. cathode current vs. cathode voltage -60 -40 -20 0 20 40 60 80 100 120 140 2.485 2.490 2.495 2.500 2.505 2.510 reference voltage (v) ambient temperature ( o c) v ka =v ref i ka =10ma -2 -1 0 1 2 3 -100 -50 0 50 100 150 cathode current (ma) cathode voltage (v) v ka =v ref t a =25 0 c -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 -200 0 200 400 600 800 cathode current ( a) cathode voltage (v) v ka =v ref t a =25 0 c typical performance characteristics
adjustable precision shunt regulators an431 data sheet 8 dec. 2012 rev. 2. 0 bcd semiconductor manufacturing limited figure 11. off-state cathode cu rrent vs. figure 12. ratio of delta reference voltage to the figure 13. small signal voltage gain vs. frequency ambient temperature ratio of delta cathode voltage -40 -20 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 off-state cathode current ( a) ambient temperature ( o c) v ka =36v v ref =0 -40-20 0 20406080100120 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 v ka =3.5v to 36v v ref / v ka (mv/v) ambient temperature ( o c) typical performance ch aracteristics (continued) 10 f 8.2k 15k i ka output 242 gnd 1k 10k 100k 1m -10 0 10 20 30 40 50 60 70 voltage gain (db) small signal frequency (hz) t a =25 0 c i ka =10ma
data sheet 9 dec. 2012 rev. 2. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431 figure 14. reference impedance vs. frequency figure 15. stability boundary conditions vs. load capacitance 1k 10k 100k 1,000k 0.1 1 10 reference impedance ( ) frequency (hz) i ka =10ma t a =25 o c gnd output 50 1k i ka typical performance ch aracteristics (continued) i ka r1 (10k) r2 150 0 10 20 30 40 50 60 70 80 90 100 10 1 0.1 0.01 stable stable cathode current (ma) load capacitance ( f) v ka =v ref v ka = 5v v ka =10v v ka =15v 0.001
adjustable precision shunt regulators an431 data sheet 10 dec. 2012 rev. 2. 0 bcd semiconductor manufacturing limited figure 16. pulse response of input and output voltage pulse generator f=100khz 220 50 output gnd typical performance ch aracteristics (continued) 0246 0 1 2 3 4 5 input input and output voltage (v) time ( s) output
data sheet 11 dec. 2012 rev. 2. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431 v in v out r1 r2 v ref an431 r3 v in v out r4 r1 r2 v ref r3 an431 i out v in an431 r2 r1 figure 17. shunt regulator figure 18. high current shunt regulator v out =(1+r1/r2)*v ref v out =(1+r2/r3)*v ref i out = v ref /r2 + i ka figure 19. current source or current limit typical application
adjustable precision shunt regulators an431 data sheet 12 dec. 2012 rev. 2. 0 bcd semiconductor manufacturing limited figure 21. pwm converter with reference figure 20. precision 5v 1a regulator az1117 v in v out adjust 8.2k an431 r1 r2 r3 250 250 5v, 1a pwm controller c1 r1 r2 680 u2 3 4 ps521 c2 2 r3 r4 r5 v out an431 q1 comp vfb typical applicat ion (continued)
data sheet 13 dec. 2012 rev. 2. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431 mechanical dimensions sot-23 unit: mm(inch) 2.300(0.091) 2.500(0.098) 1.200(0.047) 1.400(0.055) 0.920(0.036) 0.980(0.039) 0.300(0.012) 0.500(0.020) 1.900(0.075)ref 2.800(0.110) 3.000(0.118) 2.0 3.0 0.500(0.020) 0.700(0.028) 1.050(0.041)ref 0.020(0.001) 0.100(0.004) 0.900(0.035) 1.100(0.043) 4 r0.100(0.004) 7.0 7.0 0.550(0.022)ref 0.200(0.008)min 0.100(0.004) gauge plane 0.080(0.003) 0.150(0.006) r0.100(0.004) 0.0 ~ 10.0
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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